Product Description
A high-vacuum compatible rapid thermal process furnace with a heating rate of up to 150 K/sec. This multifunctional benchtop device features front loading, making it suitable for a wide range of applications.
Key Features
Excellent temperature uniformity
Precise, controlled heating rates and high cooling rates
Short process changeover times
Convenient gas control
Compact design with minimal space requirements
Technical data :
Type | RTP-100-HT |
Substrate Size | Up to 100 mm (4") diameter or 100 mm x 100 mm |
Process Chamber | Quartz glass process chamber with quartz glass holder |
Gas System | Integrated gas inlet and outlet; includes a gas line with mass flow meter for nitrogen (5 Nl/min) |
Heating System | Heated by 18 infrared lamps (20 kW); selectable upper and lower heating |
Vacuum Capability | Vacuum-tight up to 10E-6 hPa (up to 10E-3 hPa: see RTP-100) |
Vacuum Components | Includes turbomolecular pump, vacuum measurement, gate valve, and pressure gauge; backing pump not included |
Maximum Temperature | 1200C |
Temperature Control | Via thermocouple |
Cooling Requirement | Water cooling |
Power Supply | 3x 230 V, 3-phase, N, PE, 20 kW |
Weight | 65kg |
Applications
l An excellent tool for various semiconductor processes
l Implementation of new semiconductor processes
l Prototype research
l Quality control
l Annealing processes
l Rapid thermal processes
l SiAu, SiAl, SiMo alloying
l Low k dielectrics processing
l Post-implantation annealing
l Copper paste firing
l Resistor paste firing
l Other processes available on request
For more information, please contact us.
Product Description
A high-vacuum compatible rapid thermal process furnace with a heating rate of up to 150 K/sec. This multifunctional benchtop device features front loading, making it suitable for a wide range of applications.
Key Features
Excellent temperature uniformity
Precise, controlled heating rates and high cooling rates
Short process changeover times
Convenient gas control
Compact design with minimal space requirements
Technical data :
Type | RTP-100-HT |
Substrate Size | Up to 100 mm (4") diameter or 100 mm x 100 mm |
Process Chamber | Quartz glass process chamber with quartz glass holder |
Gas System | Integrated gas inlet and outlet; includes a gas line with mass flow meter for nitrogen (5 Nl/min) |
Heating System | Heated by 18 infrared lamps (20 kW); selectable upper and lower heating |
Vacuum Capability | Vacuum-tight up to 10E-6 hPa (up to 10E-3 hPa: see RTP-100) |
Vacuum Components | Includes turbomolecular pump, vacuum measurement, gate valve, and pressure gauge; backing pump not included |
Maximum Temperature | 1200C |
Temperature Control | Via thermocouple |
Cooling Requirement | Water cooling |
Power Supply | 3x 230 V, 3-phase, N, PE, 20 kW |
Weight | 65kg |
Applications
l An excellent tool for various semiconductor processes
l Implementation of new semiconductor processes
l Prototype research
l Quality control
l Annealing processes
l Rapid thermal processes
l SiAu, SiAl, SiMo alloying
l Low k dielectrics processing
l Post-implantation annealing
l Copper paste firing
l Resistor paste firing
l Other processes available on request
For more information, please contact us.
