Our LPE systems provide the user with a process-controlled furnace for automated user-specified segment-driven process recipes that achieve optimum control over wafer processing and repetitive results from run to run. The overall systems are designed to reliably grow epitaxial layers of semiconductor materials including mercury cadmium telluride (MCT, HgCdTe) and Gallium Arsenide (GaAs). The LPE systems are capable of processing a wafer over a uniform flat temperature zone.
Specifications
Feature | l ·Two zones heating chamber: bottom heating and side around heating to create thermal gradient easily l ·MoSi2 heating elements with max. temperature 1700ºC l ·Precision temperature control with +/- 0.1ºC accuracy l ·Precision rotary pulling mechanism from 0.03 mm/hr to 30 mm/hr. l ·High-quality fibrous alumina thermal insulation to ensure the best energy saving l Touch screen PC controls for all parameters and record all data. |
Power | l 208 - 240VAC, Single Phase, 50/60Hz l 13 KW Max. l 3-meter length power cable included, but no plug which is available upon request |
Heating Chamber | l Chamber size: Dia 300 mm x H 210 mm l Heating Element: 1800C grade MoSi2 (8 pcs U type rods round sides and 3 straight rods on the bottom) l The side heating and bottom heating are controlled independently to create a suitable temperature gradient l Two B-type thermal couples are installed. one for temperature control and one for temperature monitor. l A removable top cover with a 20 mm hole is included for easy operation l One 16 mm ID alumina tube is inserted into the heating chamber for observation during crystal growth |
Working Temperature | l Max. Working Temperature: 1700ºC (< 1 hr) l Standard Working Temperature: 1600ºC (continuous) |
Temperature Control | l One Eurotherm 3000 Controller for controlling furnace temperature with +/- 0.1oC accuracy l One digital temperature for monitoring furnace temperature and over-temperature protection l Heating Rate 0 ~ 10ºC / min suggested |
Pulling Mechanism | l Pulling Rod: 16 mm Alumina rod is included (customized rod is available upon request) l Pulling Rate: 0.03 -30 mm/hr variable l Max Travel Distance: 320 mm l Quick up & down: Manually operated l Rotation Speed: 0.03-80 RPM l Note: Crucible is not included and the customer shall prepare their own crucible |
Control Unit | l 14" touch screen PC for controlling all processing parameters: temperature, pulling speed, and rotation l The PC can be operated via WIFI at a remote location via a wireless router |
Weight | l 450 Kg |
Warranty | l One-year limited warranty (Consumable parts such as processing tubes, o-rings, and heating elements are not covered by the warranty) |
Our LPE systems provide the user with a process-controlled furnace for automated user-specified segment-driven process recipes that achieve optimum control over wafer processing and repetitive results from run to run. The overall systems are designed to reliably grow epitaxial layers of semiconductor materials including mercury cadmium telluride (MCT, HgCdTe) and Gallium Arsenide (GaAs). The LPE systems are capable of processing a wafer over a uniform flat temperature zone.
Specifications
Feature | l ·Two zones heating chamber: bottom heating and side around heating to create thermal gradient easily l ·MoSi2 heating elements with max. temperature 1700ºC l ·Precision temperature control with +/- 0.1ºC accuracy l ·Precision rotary pulling mechanism from 0.03 mm/hr to 30 mm/hr. l ·High-quality fibrous alumina thermal insulation to ensure the best energy saving l Touch screen PC controls for all parameters and record all data. |
Power | l 208 - 240VAC, Single Phase, 50/60Hz l 13 KW Max. l 3-meter length power cable included, but no plug which is available upon request |
Heating Chamber | l Chamber size: Dia 300 mm x H 210 mm l Heating Element: 1800C grade MoSi2 (8 pcs U type rods round sides and 3 straight rods on the bottom) l The side heating and bottom heating are controlled independently to create a suitable temperature gradient l Two B-type thermal couples are installed. one for temperature control and one for temperature monitor. l A removable top cover with a 20 mm hole is included for easy operation l One 16 mm ID alumina tube is inserted into the heating chamber for observation during crystal growth |
Working Temperature | l Max. Working Temperature: 1700ºC (< 1 hr) l Standard Working Temperature: 1600ºC (continuous) |
Temperature Control | l One Eurotherm 3000 Controller for controlling furnace temperature with +/- 0.1oC accuracy l One digital temperature for monitoring furnace temperature and over-temperature protection l Heating Rate 0 ~ 10ºC / min suggested |
Pulling Mechanism | l Pulling Rod: 16 mm Alumina rod is included (customized rod is available upon request) l Pulling Rate: 0.03 -30 mm/hr variable l Max Travel Distance: 320 mm l Quick up & down: Manually operated l Rotation Speed: 0.03-80 RPM l Note: Crucible is not included and the customer shall prepare their own crucible |
Control Unit | l 14" touch screen PC for controlling all processing parameters: temperature, pulling speed, and rotation l The PC can be operated via WIFI at a remote location via a wireless router |
Weight | l 450 Kg |
Warranty | l One-year limited warranty (Consumable parts such as processing tubes, o-rings, and heating elements are not covered by the warranty) |
