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Low Pressure Chemical Vapor Deposition LPCVD furnace system
  • Low Pressure Chemical Vapor Deposition LPCVD furnace system
  • Low Pressure Chemical Vapor Deposition LPCVD furnace system
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Low Pressure Chemical Vapor Deposition LPCVD furnace system

Low Pressure Chemical Vapor Deposition LPCVD furnace system is a thermal process that deposits various films at low pressure. Low pressure chemical vapor deposition system LPCVD is Designed and manufactured to meet the high temperature and rapid cooling requirements of graphene and CNT research.

Low Pressure Chemical Vapor Deposition LPCVD furnace system is a thermal process that deposits various films at low pressure. Low pressure chemical vapor deposition system LPCVD is Designed and manufactured to meet the high temperature and rapid cooling requirements of graphene and CNT research, STA’s LPCVD Low Pressure Chemical Vapor Deposition system engineered a water-cooled furnace that can reach 1350°C in 10 minutes, as well as cool down below 800°C in a mere 2 minutes. Controlled graphene growth is ensured, and processing times are kept to a minimum with the Low Pressure Chemical Vapor Deposition system. Various chamber tube sizes are available between Ø 2 in and Ø 12 in allowing processing of single small samples up to batches in 6—12 inch wafers. Annealing Diffusion is a thermal treatment used to move dopants, or impurities, and make dopants introduced by ion implantation electrically active.

 

LPCVD furnace system refers to a thermal process used to deposit thin films from gas-phase precursors at subatmospheric pressures. Process conditions are typically selected so that the growth rate is limited by the rate of the surface reaction, which is temperature-dependent. The temperature can be controlled with great precision, resulting in excellent within-wafer, wafer-to-wafer, and run-to-run uniformities. Tystar has years of experience and an industry-wide reputation for its expertise in the following LPCVD processes:

 

Used Thermco 2-stack complete system in stock, may be refurbished like this one to any process requirements needed (atmospheric, LPCVD or PECVD), 6”/8"/10”/12”/ capable.

 

Low Pressure Chemical Vapor Deposition LPCVD furnace system Included:-

1. Furnace, automatic load station and gas cabinet

2. Heating elements with up to 6”/8"/10”/12”/ dia. wafer processing capability

3. Includes two new spare heating elements

4. Mass Flow Controlled gas systems on both tube levels

5. Each tube level includes a quartz process tube

6. Each tube level includes an automatic loader, SiC paddle and vacuum door assembly

7. Includes rebuilt dry pump/blower assembly (throttle valve, gate valve, particle filter) includes on each tube level

8. Includes one Type K profile thermocouple

9. Digital process and temperature controllers per tube level

10. A HOST computer system

11. Process guarantees for SiN and Poly processes included

12. Startup assistance, training and process verification at USA customer facility included

13. One year equipment warranty included


Low Pressure Chemical Vapor Deposition LPCVD furnace system is a thermal process that deposits various films at low pressure. Low pressure chemical vapor deposition system LPCVD is Designed and manufactured to meet the high temperature and rapid cooling requirements of graphene and CNT research, STA’s LPCVD Low Pressure Chemical Vapor Deposition system engineered a water-cooled furnace that can reach 1350°C in 10 minutes, as well as cool down below 800°C in a mere 2 minutes. Controlled graphene growth is ensured, and processing times are kept to a minimum with the Low Pressure Chemical Vapor Deposition system. Various chamber tube sizes are available between Ø 2 in and Ø 12 in allowing processing of single small samples up to batches in 6—12 inch wafers. Annealing Diffusion is a thermal treatment used to move dopants, or impurities, and make dopants introduced by ion implantation electrically active.

 

LPCVD furnace system refers to a thermal process used to deposit thin films from gas-phase precursors at subatmospheric pressures. Process conditions are typically selected so that the growth rate is limited by the rate of the surface reaction, which is temperature-dependent. The temperature can be controlled with great precision, resulting in excellent within-wafer, wafer-to-wafer, and run-to-run uniformities. Tystar has years of experience and an industry-wide reputation for its expertise in the following LPCVD processes:

 

Used Thermco 2-stack complete system in stock, may be refurbished like this one to any process requirements needed (atmospheric, LPCVD or PECVD), 6”/8"/10”/12”/ capable.

 

Low Pressure Chemical Vapor Deposition LPCVD furnace system Included:-

1. Furnace, automatic load station and gas cabinet

2. Heating elements with up to 6”/8"/10”/12”/ dia. wafer processing capability

3. Includes two new spare heating elements

4. Mass Flow Controlled gas systems on both tube levels

5. Each tube level includes a quartz process tube

6. Each tube level includes an automatic loader, SiC paddle and vacuum door assembly

7. Includes rebuilt dry pump/blower assembly (throttle valve, gate valve, particle filter) includes on each tube level

8. Includes one Type K profile thermocouple

9. Digital process and temperature controllers per tube level

10. A HOST computer system

11. Process guarantees for SiN and Poly processes included

12. Startup assistance, training and process verification at USA customer facility included

13. One year equipment warranty included