ZHENGZHOU HENGTONG FURNACE CO,. LTD
Small Czochralski CZ Crystal Grower System for Single Crystals
  • Small Czochralski CZ Crystal Grower System for Single Crystals
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Small Czochralski CZ Crystal Grower System for Single Crystals

HTCGF-2000-CZ Crystal Grower System is a small-scale Czochralski CZ Crystal Growth Furnace for metals and oxides with a diameter < 1". It has been proven excellent for pulling various crystals with up to 2100 deg C, IMCS-2000-CZ including Al2O3, GGG, YAG, LaAlO3, Si, Ge, etc.

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  • Product Details
  • HTCGF-2000-CZ Crystal Grower System is a small-scale Czochralski CZ Crystal Growth Furnace for metals and oxides with a diameter < 1". It has been proven excellent for pulling various crystals with up to 2100 deg C, IMCS-2000-CZ including Al2O3, GGG, YAG, LaAlO3, Si, Ge, etc. HT provides technical training on installing and operating before shipping, also provides online video technical support worldwide.

     

    Power

    Input: 208VAC or 380VAC, 3 phase, 50A (max induction power), 50/60Hz

    Output: 25kW(max)

    Heating and Temperature

    Max: 2100°C (3812°F) with induction heating

    Vacuum Chamber

    Material: SS304

    Size: Φ320×320mm, equipped with a quartz window (Φ120mm) to observe material melting, crystal seeding, and growth. 

    There is one KF25 port and one KF40 vacuum port connected to the back of the chamber. There is also one LF160 port on the right side of the chamber for molecular pump system connecting. 

    Pulling Mechanism

    The pulling mechanism is driven by a precision servo motor/n

    Pulling Speed: 0.1-10 mm/hr

    Pulling rod rotation speed: 0.1-23 rpm

    Travel Distance: 0-300mm

    The pulling mechanism can move as quickly as 35mm/min

    Vacuum atmosphere

    The vacuum chamber can be evacuated and filled with inert gases.

    Equipped with a digital anti-corrosion vacuum gauge (oiled ceramic coating on the sensor), the measuring range is 10 ^-5 ~ 1000torr

    Vacuum level:    5x 10-5 torr (turbopump)  or 5 × 10-2 Torr (mechanical pump)
    Vacuum pump ( optional):  Please click the picture below to choose a vacuum pump at the extra cost.

    Induction Heating

    25KW (30-80KHz) induction power supply with Time Controller and Power Controller

    Induction coil: φ90mm × 80mmH

    Water cooling: 116L/min circulating water chiller is included

    Please note, the standard configuration does not contain a temperature control system, optional temperature control system, to control the melting temperature.

    The crucible and thermal insulation accessories are not included.    We can provide them based on your application.

    Control Panel

    Touch screen control panel control

    Induction power / pulling speed / rotating speed

     

    Application Notes of Czochralski Crystal Growth Furnace system.

    Melting materials

    Crystal seeding

    Start pulling

    Sapphire boule grown

    Ni Crystal grown

     

    Stability provides the crystal grower with a known and constant environment for demanding crystal growth. Stability assures uniform, tightly defined temperatures and thermal gradients for consistent melts and zone refining. Stability requires well-controlled gaseous or vacuum environments. Stability in crystal growth demands smooth, highly constant, vibration-free motions with large and dynamic ranges, programmable first and second derivatives and multi-axis configurations – yet all must be controlled.


    HTCGF-2000-CZ Crystal Grower System is a small-scale Czochralski CZ Crystal Growth Furnace for metals and oxides with a diameter < 1". It has been proven excellent for pulling various crystals with up to 2100 deg C, IMCS-2000-CZ including Al2O3, GGG, YAG, LaAlO3, Si, Ge, etc. HT provides technical training on installing and operating before shipping, also provides online video technical support worldwide.

     

    Power

    Input: 208VAC or 380VAC, 3 phase, 50A (max induction power), 50/60Hz

    Output: 25kW(max)

    Heating and Temperature

    Max: 2100°C (3812°F) with induction heating

    Vacuum Chamber

    Material: SS304

    Size: Φ320×320mm, equipped with a quartz window (Φ120mm) to observe material melting, crystal seeding, and growth. 

    There is one KF25 port and one KF40 vacuum port connected to the back of the chamber. There is also one LF160 port on the right side of the chamber for molecular pump system connecting. 

    Pulling Mechanism

    The pulling mechanism is driven by a precision servo motor/n

    Pulling Speed: 0.1-10 mm/hr

    Pulling rod rotation speed: 0.1-23 rpm

    Travel Distance: 0-300mm

    The pulling mechanism can move as quickly as 35mm/min

    Vacuum atmosphere

    The vacuum chamber can be evacuated and filled with inert gases.

    Equipped with a digital anti-corrosion vacuum gauge (oiled ceramic coating on the sensor), the measuring range is 10 ^-5 ~ 1000torr

    Vacuum level:    5x 10-5 torr (turbopump)  or 5 × 10-2 Torr (mechanical pump)
    Vacuum pump ( optional):  Please click the picture below to choose a vacuum pump at the extra cost.

    Induction Heating

    25KW (30-80KHz) induction power supply with Time Controller and Power Controller

    Induction coil: φ90mm × 80mmH

    Water cooling: 116L/min circulating water chiller is included

    Please note, the standard configuration does not contain a temperature control system, optional temperature control system, to control the melting temperature.

    The crucible and thermal insulation accessories are not included.    We can provide them based on your application.

    Control Panel

    Touch screen control panel control

    Induction power / pulling speed / rotating speed

     

    Application Notes of Czochralski Crystal Growth Furnace system.

    Melting materials

    Crystal seeding

    Start pulling

    Sapphire boule grown

    Ni Crystal grown

     

    Stability provides the crystal grower with a known and constant environment for demanding crystal growth. Stability assures uniform, tightly defined temperatures and thermal gradients for consistent melts and zone refining. Stability requires well-controlled gaseous or vacuum environments. Stability in crystal growth demands smooth, highly constant, vibration-free motions with large and dynamic ranges, programmable first and second derivatives and multi-axis configurations – yet all must be controlled.